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This title is printed to order. This book may have been self-published. If so, we cannot guarantee the quality of the content. In the main most books will have gone through the editing process however some may not. We therefore suggest that you be aware of this before ordering this book. If in doubt check either the author or publisher’s details as we are unable to accept any returns unless they are faulty. Please contact us if you have any questions.
This book contains papers that were presented at the International Conference on Polycrystalline Semiconductors - Grain Boundaries, Dislocations and Het erointerfaces - (POLYSE ‘90), which was held in Schwabisch Hall, FRG, from July 30 to August 3, 1990. This conference was a satellite conference of the 20th International Conference on the Physics of Semiconductors. POLYSE '90, like its predecessor POLYSE '88, brought together scientists from research in stitutions and industrial laboratories with a view to bridging the gap between fundamental and technological aspects of polycrystalline semiconductors. With this aim, a total of 14 recognized scientists from universities and in dustry were invited to review their fields of interest. The expert presentations of these scientists were complemented by contributed papers and poster con tributions, the authors of which were additionally allowed four minutes for an oral summary. This combination of different types of presentation led to very lively and stimulating discussions.
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This title is printed to order. This book may have been self-published. If so, we cannot guarantee the quality of the content. In the main most books will have gone through the editing process however some may not. We therefore suggest that you be aware of this before ordering this book. If in doubt check either the author or publisher’s details as we are unable to accept any returns unless they are faulty. Please contact us if you have any questions.
This book contains papers that were presented at the International Conference on Polycrystalline Semiconductors - Grain Boundaries, Dislocations and Het erointerfaces - (POLYSE ‘90), which was held in Schwabisch Hall, FRG, from July 30 to August 3, 1990. This conference was a satellite conference of the 20th International Conference on the Physics of Semiconductors. POLYSE '90, like its predecessor POLYSE '88, brought together scientists from research in stitutions and industrial laboratories with a view to bridging the gap between fundamental and technological aspects of polycrystalline semiconductors. With this aim, a total of 14 recognized scientists from universities and in dustry were invited to review their fields of interest. The expert presentations of these scientists were complemented by contributed papers and poster con tributions, the authors of which were additionally allowed four minutes for an oral summary. This combination of different types of presentation led to very lively and stimulating discussions.