Semiconductor Device Attachment by Silver Paste Sintering

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Silver interconnection has superior performance than current interconnection materials/techniques, including conductive adhesives and reflowed solders; but high processing temperature prevent its application. With the large external pressure, the micro-scale silver paste can be sintered to form high-quality interconnection layer at 240oC. The external pressure, however, makes this technique difficult to implement. Because nanoscale silver particles have lower sintering temperature, several approaches were developed to address sintering challenges of nanoscale silver particles, such as particles aggregation, agglomeration, and non- densification diffusion at low temperature. The low- temperature sintering nanoscale technique was successfully demonstrated in the interconnecting SiC device for high-temperature application. This book should be helpful for researches and engineers in the power semiconductor assembling and applications. Since this book demonstrated a novel sintering technique with superior performance even at high temperature (>800oe, it should be also useful to professionals in high power LED, laser device, and etc.