Wide Band Gap Electronic Materials

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The topics covered by this work include electronic doping of diamond, n-type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide-band gap electronic applications, and nanophase diamond. The book includes a description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices. Nanophase diamond particles having a narrow size distribution of about four nm can be created by an explosive shock-wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants. Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.